Kammachi Shingo, Goshima Yoshiharu, Goami Nobutaka, Yamashita Naoaki, Kakinuma Shigeru, Nishikata Kentaro, Naka Nobuyuki, Inoue Shozo, Namazu Takahiro
Department of Mechanical and Electrical System Engineering, Faculty of Engineering, Kyoto University of Advanced Science, 18 Gotanda-cho, Yamanouchi, Ukyo-ku, Kyoto 615-8577, Japan.
R&D Department, HORIBA, Ltd., Miyanohigashi, Kisshoin, Minami-ku, Kyoto 601-8510, Japan.
Materials (Basel). 2020 Oct 10;13(20):4490. doi: 10.3390/ma13204490.
We describe the stress analysis of silicon oxide (SiO) thin film using cathodoluminescence (CL) spectroscopy and discuss its availability in this paper. To directly measure the CL spectra of the film under uniaxial tensile stresses, specially developed uniaxial tensile test equipment is used in a scanning electron microscope (SEM) equipped with a CL system. As tensile stress increases, the peak position and intensity proportionally increase. This indicates that CL spectroscopy is available as a stress measurement tool for SiO film. However, the electron beam (EB) irradiation time influences the intensity and full width at half maximum (FWHM), which implies that some damage originating from EB irradiation accumulates in the film. The analyses using Raman spectroscopy and transmission electron microscopy (TEM) demonstrate that EB irradiation for stress measurement with CL induces the formation of silicon (Si) nanocrystals into SiO film, indicating that CL stress analysis of the film is not nondestructive, but destructive inspection.
