Departamento de Engenharia de Materiais, Universidade Tecnológica Federal do Paraná-UTFPR, CEP 86812-460, Londrina-PR, Brazil.
J Phys Condens Matter. 2011 Aug 17;23(32):325801. doi: 10.1088/0953-8984/23/32/325801. Epub 2011 Jul 25.
The energy transitions of GaAsSbN/GaAs strained-layer single quantum wells (QWs), grown by molecular-beam epitaxy, are studied in detail, using photoluminescence (PL) and photoreflectance (PR) spectroscopies. The optical transitions energy observed in the PL and PR spectra of GaAsSbN/GaAs QWs show a strong decrease with a small increase in the N composition. These effects are explained through the interaction between the conduction band and a narrow resonant band formed by nitrogen states in the GaAsSbN alloy. The temperature dependence of ground-state energy of strained-layer QWs is analyzed using the Bose-Einstein relation in the temperature range from 9 to 295 K. The parameters that describe the temperature variations of the ground-state energies are evaluated and discussed.
砷化镓锑氮/砷化镓应变量子阱（QW）的能量跃迁通过分子束外延生长，使用光致发光（PL）和光反射（PR）光谱学进行了详细研究。在 PL 和 PR 光谱中观察到的 GaAsSbN/GaAs QW 的光学跃迁能量随着 N 组成的微小增加而强烈降低。这些效应通过导带与由 GaAsSbN 合金中氮态形成的窄共振带之间的相互作用来解释。在 9 到 295 K 的温度范围内，使用玻色-爱因斯坦关系分析了应变量子阱的基态能量的温度依赖性。评估并讨论了描述基态能量温度变化的参数。
