实时观察杂质在硅纳米线中的扩散。

Real-time observation of impurity diffusion in silicon nanowires.

机构信息

Department of Chemical Engineering, Texas Materials Institute, Center for Nano and Molecular Science and Technology, The University of Texas at Austin, Austin, Texas 78712, United States.

出版信息

Nano Lett. 2011 Sep 14;11(9):3803-8. doi: 10.1021/nl201879u. Epub 2011 Jul 29.

DOI:10.1021/nl201879u

PMID:21786784

Abstract

Solid-state diffusion of the transition metal impurities, gold (Au), nickel (Ni), and copper (Cu), in silicon (Si) nanowires was studied by in situ transmission electron microscopy. Compared to diffusion in a bulk crystal, Au diffusion is extremely slow when the amount of metal is limited but significantly enhanced when an unlimited supply is available. Cu and Ni diffusion leads to rapid silicide formation but slows considerably with physical encapsulation by a volume-restricting carbon shell.

摘要

采用原位透射电子显微镜研究了过渡金属杂质金（Au）、镍（Ni）和铜（Cu）在硅（Si）纳米线中的固态扩散。与在体单晶中的扩散相比，当金属量有限时，Au 的扩散极其缓慢，但当金属供应不受限时，Au 的扩散显著增强。Cu 和 Ni 的扩散导致了快速的硅化物形成，但当被体积限制的碳壳物理包裹时，扩散速度会大大降低。