Mizoguchi Teruyasu
Institute of Engineering Innovation, The University of Tokyo, Yayoi, Bunkyo, Tokyo 113-8656, Japan.
J Phys Condens Matter. 2009 Mar 11;21(10):104215. doi: 10.1088/0953-8984/21/10/104215. Epub 2009 Feb 10.
This article reviews overlap population (OP) diagrams for electron energy loss near-edge structure (ELNES) and x-ray absorption near-edge structure (XANES). By using the OP diagrams, peaks in ELNES and XANES of MgO, ZnO, AlN, GaN, InN, and YBa(2)Cu(3)O(7-x) are interpreted in terms of cation-anion and cation-cation interactions. Common features are found in the OP diagrams for different edges. A reconstruction of the unoccupied electronic structure is demonstrated by aligning the different edges with the common features in the OP diagrams. The OP diagram is also applied to the Cu/Al(2)O(3) hetero-interface to find the relationships among ELNES, atomic and electronic structures, and properties.
本文综述了用于电子能量损失近边结构（ELNES）和X射线吸收近边结构（XANES）的重叠布居（OP）图。通过使用OP图，从阳离子-阴离子和阳离子-阳离子相互作用的角度解释了MgO、ZnO、AlN、GaN、InN和YBa₂Cu₃O₇₋ₓ的ELNES和XANES中的峰。在不同边的OP图中发现了共同特征。通过将不同边与OP图中的共同特征对齐，展示了未占据电子结构的重构。OP图还应用于Cu/Al₂O₃异质界面，以找出ELNES、原子和电子结构以及性质之间的关系。
