通过扫描探针显微镜在基于GaAs/AlGaAs的微器件中进行可控的正、负表面电荷注入与擦除。

Controlled positive and negative surface charge injection and erasure in a GaAs/AlGaAs based microdevice by scanning probe microscopy.

作者信息

Valdrè G, Moro D, Lee Dohyun, Smith C G, Farrer I, Ritchie D A, Green R T

机构信息

Department of Earth and Geo-Environmental Sciences, University of Bologna, P. Porta San Donato 1, Bologna I-40126, Italy.

出版信息

Nanotechnology. 2008 Jan 30;19(4):045304. doi: 10.1088/0957-4484/19/04/045304. Epub 2008 Jan 4.

DOI:10.1088/0957-4484/19/04/045304

PMID:21817501

Abstract

In this paper, we show that positive and negative charges can be injected into the surface of SiO(2)/Si(3)N(4)/SiO(2)/GaAs/AlGaAs heterostructure material by using a biased tip of a scanning probe microscope. Furthermore, the injected charges can be erased with the same tip once grounded, working in slow scan and contact mode. Surface potential measurements by quantitative analysis of Kelvin probe force microscopy after drawing and erasing charges at room temperature are presented and discussed.

摘要

在本文中，我们表明通过使用扫描探针显微镜的偏置尖端，可以将正电荷和负电荷注入到SiO(2)/Si(3)N(4)/SiO(2)/GaAs/AlGaAs异质结构材料的表面。此外，一旦接地，以慢扫描和接触模式工作的同一尖端可以擦除注入的电荷。本文展示并讨论了在室温下绘制和擦除电荷后，通过开尔文探针力显微镜的定量分析进行的表面电位测量。