Zhou Wei, Lin Feng, Ren Liang, Huang Xiaomin, Ran Chunbo, Ding Shuai, Peng Hailin, Liu Zhongfan
Centre for Nanoscale Science and Technology (CNST), Beijing National Laboratory for Molecular Sciences (BNLMS), State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China.
Nanotechnology. 2008 Jun 11;19(23):235303. doi: 10.1088/0957-4484/19/23/235303. Epub 2008 May 6.
Thermochemical hole burning (THB) memory is an ultrahigh density data storage technique based on the scanning tunneling microscope (STM). It utilizes the STM current to induce localized thermochemical decomposition of TCNQ-based charge transfer (CT) complexes and sequentially create nanometer-sized holes as information bits. The writing reliability and hole size depend on many factors, including the properties of the storage materials and the STM tip, and the tip-sample distance and interaction. We have found here that for the high electrical conductivity CT complexes, the hole size (represented by volume) monotonically decreases with the tip displacement increasing in the direction of leaving the sample; but for low electrical conductivity samples, the hole size first increases and then decreases with the tip displacement increasing in the same direction. Subsequent experiments and analyses indicate that the surface deformation induced by the tip-sample interaction and the heat conduction of the metal tip account for such a unique phenomenon.
热化学烧孔（THB）存储器是一种基于扫描隧道显微镜（STM）的超高密度数据存储技术。它利用STM电流诱导基于TCNQ的电荷转移（CT）复合物发生局部热化学分解，并依次创建纳米尺寸的孔作为信息位。写入可靠性和孔尺寸取决于许多因素，包括存储材料和STM针尖的特性，以及针尖与样品的距离和相互作用。我们在此发现，对于高电导率的CT复合物，孔尺寸（以体积表示）随着针尖在离开样品方向上的位移增加而单调减小；但对于低电导率样品，在相同方向上，孔尺寸随着针尖位移增加先增大后减小。随后的实验和分析表明，针尖与样品相互作用引起的表面变形以及金属针尖的热传导导致了这种独特现象。
