Peng Hailin, Chen Zhuo, Tong Lianming, Yu Xuechun, Ran Chunbo, Liu Zhongfan
Center for Nanoscale Science and Technology, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China.
J Phys Chem B. 2005 Mar 3;109(8):3526-30. doi: 10.1021/jp0462409.
The present article describes a thermochemical hole burning (THB) effect on a charge-transfer complex triethylammonium bis-7,7,8,8-tetracyanoquinodimethane (TEA(TCNQ)(2)) using single-walled carbon nanotube (SWNT) scanning tunneling microscopy (STM) tips, which demonstrates the possibility of optimizing the THB storage materials and the writing tips for ultrahigh-density data storage. TEA(TCNQ)(2) is proven to be a high-performance THB storage material, which gives deeper holes and larger hole depth-to-diameter ratio as compared to the previous materials dipropylammonium bis-7,7,8,8-tetracyanoquinodimethane and N-methyl-N-ethylmorpholinium bis-7,7,8,8-tetracyanoquinodimethane. Instead of conventional Pt/Ir STM tips, SWNT tips made by a unique chemical assembly technique we developed have been shown to be excellent writing tips for greatly decreasing the hole sizes and increasing the storage density. Possible reasons for the improvements on the storage performance were discussed.
本文描述了利用单壁碳纳米管（SWNT）扫描隧道显微镜（STM）针尖对电荷转移复合物双（7,7,8,8 - 四氰基对苯二醌二甲烷）三乙铵（TEA(TCNQ)₂）产生的热化学烧孔（THB）效应，这证明了优化THB存储材料和用于超高密度数据存储的写入针尖的可能性。已证明TEA(TCNQ)₂是一种高性能的THB存储材料，与之前的材料双（7,7,8,8 - 四氰基对苯二醌二甲烷）二丙铵和双（7,7,8,8 - 四氰基对苯二醌二甲烷）N - 甲基 - N - 乙基吗啉鎓相比，它能产生更深的孔和更大的孔深径比。我们通过独特的化学组装技术制备的SWNT针尖，而非传统的Pt/Ir STM针尖，已被证明是出色的写入针尖，可大幅减小孔尺寸并提高存储密度。文中讨论了存储性能提升的可能原因。
