Ran Chunbo, Peng Hailin, Zhou Wei, Yu Xuechun, Liu Zhongfan
Center for Nanoscale Science and Technology (CNST), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China.
J Phys Chem B. 2005 Dec 1;109(47):22486-90. doi: 10.1021/jp0528616.
We demonstrate here the thermochemical hole burning (THB) effect on a series of N-substituted morpholinium 7,7,8,8-tetracyanoquinodimethane charge-transfer (C-T) complexes for ultra-high-density data storage. A correlation between the decomposition temperature of the charge-transfer complex and the threshold voltage of hole burning was observed: the higher the decomposition temperature, the larger the writing threshold value, suggesting the possibility of molecular design for optimizing the hole burning performance. The macroscopic decomposition properties of these charge-transfer complexes were studied by thermal gravimetry combined with mass spectrometry. Theoretical estimation of the temperature rise induced by scanning tunneling microscopy current heating was also conducted, which indicated that the maximum temperature certainly exceeds the decomposition temperatures of these C-T complexes. These observations are consistent with the thermochemical hole burning mechanism.
我们在此展示了热化学空穴烧蚀（THB）效应在一系列用于超高密度数据存储的N-取代吗啉鎓7,7,8,8-四氰基对苯二甲烷电荷转移（C-T）配合物上的情况。观察到电荷转移配合物的分解温度与空穴烧蚀的阈值电压之间存在相关性：分解温度越高，写入阈值越大，这表明通过分子设计优化空穴烧蚀性能具有可能性。通过热重分析结合质谱研究了这些电荷转移配合物的宏观分解特性。还进行了扫描隧道显微镜电流加热引起的温度升高的理论估算，结果表明最高温度肯定超过了这些C-T配合物的分解温度。这些观察结果与热化学空穴烧蚀机制一致。
