School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore.
Nanotechnology. 2013 Feb 22;24(7):075303. doi: 10.1088/0957-4484/24/7/075303. Epub 2013 Jan 28.
Ultrahigh density nanostructure arrays with controlled size and position have promised a variety of potential applications. However, their practical realization is often hindered by the amount of resources required for large-scale fabrication. Using an ultrahigh contrast electron beam lithography process, we show ultrahigh resolution and high aspect ratio patterning capability which can be done at an exposure dose lower than 100 μC cm(-2). In particular, the high aspect ratio of dot arrays on 110 nm thick resist is confirmed by a standard lift-off process of 20 nm thick gold nanodots at sub-15 nm feature size and 40 nm pitch. The smallest gold nanodot size from our experiment is 11 nm.
具有可控尺寸和位置的超高密度纳米结构阵列有望实现各种潜在应用。然而，其实际实现往往受到大规模制造所需资源的限制。我们使用超高对比度电子束光刻工艺，展示了超高分辨率和高纵横比的图案化能力，其曝光剂量可低于 100 μC cm(-2)。特别是，通过对厚度为 20nm 的金纳米点进行标准的 20nm 厚的剥离工艺，在亚 15nm 特征尺寸和 40nm 间距下证实了在 110nm 厚的光刻胶上的高纵横比的点阵列。我们实验的最小金纳米点尺寸为 11nm。
