Han P G, Ma Z Y, Wang Z B, Zhang X
Laser Research Institute and Department of Physics, Qufu Normal University, Qufu 273165, People's Republic of China.
Nanotechnology. 2008 Aug 13;19(32):325708. doi: 10.1088/0957-4484/19/32/325708. Epub 2008 Jul 4.
Amorphous Si/SiO(2) multilayers (MLs) on silicon wafers were fabricated in a plasma enhanced chemical vapor deposition system via cycles of silicon deposition and plasma oxidation. The structural and optical properties of the MLs were characterized using transmission electron microscopy, Raman scattering and room temperature photoluminescence (PL) measurements. Intermediate phase silicon structure (IPSS), which is intermediate in order between the continuous random network amorphous phase and the well ordered crystalline phase, was found in the a-Si sublayers around the crystallization onset temperature. Red-near infrared wavelength region PL from recombination via structural defects inside the IPSS and Si = O at the surface of both nanocrystal Si (nc-Si) and IPSS was observed. In the samples with IPSS and nc-Si coexisting, the IPSS was found to be about five times more efficient as regards PL than nc-Si.
通过硅沉积和等离子体氧化循环，在等离子体增强化学气相沉积系统中制备了硅片上的非晶硅/二氧化硅多层膜（MLs）。使用透射电子显微镜、拉曼散射和室温光致发光（PL）测量对MLs的结构和光学性质进行了表征。在接近结晶起始温度的非晶硅子层中发现了中间相硅结构（IPSS），其有序程度介于连续随机网络非晶相和有序晶相之间。观察到在IPSS内部通过结构缺陷以及在纳米晶硅（nc-Si）和IPSS表面的Si = O复合产生的红-近红外波长区域的PL。在IPSS和nc-Si共存的样品中，发现IPSS在PL方面的效率约为nc-Si的五倍。
