Haenen Ken, Lazea Andrada, Barjon Julien, D'Haen Jan, Habka Nada, Teraji Tokuyuki, Koizumi Satoshi, Mortet Vincent
Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek, Belgium. Division IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek, Belgium.
J Phys Condens Matter. 2009 Sep 9;21(36):364204. doi: 10.1088/0953-8984/21/36/364204. Epub 2009 Aug 19.
The formation and properties of (110)-textured P-doped microcrystalline CVD diamond were studied. Based on several microscopy techniques, with a special emphasis on electron backscattered diffraction, a detailed determination of the grain orientations with respect to the exact [110] axis is given. The different orientations present in the film, in combination with low phosphine concentrations in the gas phase, lead to a variation in P incorporation that can vary over three orders of magnitude, as determined with cathodoluminescence mapping. The role of the surface morphology in the observation of these large incorporation differences is explained. Hall measurements confirm that the films are n-type conductive with a thermal activation energy of 0.56 eV. Based on B-doped substrates, pn junctions were created, showing a rectification ratio of nearly 10(4) at ± 25 V.
研究了（110）织构的P掺杂微晶CVD金刚石的形成及性能。基于多种显微镜技术，特别着重于电子背散射衍射，给出了晶粒相对于精确[110]轴的取向的详细测定结果。通过阴极发光映射确定，薄膜中存在的不同取向与气相中低浓度的磷化氢相结合，导致P掺入量变化可达三个数量级。解释了表面形貌在观察这些大的掺入差异中的作用。霍尔测量证实这些薄膜是n型导电的，热激活能为0.56 eV。基于B掺杂衬底，制备了pn结，在±25 V时显示出近10⁴的整流比。
