通过镍箔直接硅化控制硅化物纳米线阵列的生长和场发射特性。
Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil.
作者信息
Liu Zhihong, Zhang Hui, Wang Lei, Yang Deren
机构信息
State Key Lab of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China.
出版信息
Nanotechnology. 2008 Sep 17;19(37):375602. doi: 10.1088/0957-4484/19/37/375602. Epub 2008 Aug 1.
Nickel silicide nanowire arrays have been achieved by the decomposition of SiH(4) on Ni foil at 650 °C. It is indicated that the nickel silicide nanowires consist of roots with diameter of about 100-200 nm and tips with diameter of about 10-50 nm. A Ni diffusion controlled mechanism is proposed to explain the formation of the nickel silicide nanowires. Field emission measurement shows that the turn-on field of the nickel silicide nanowire arrays is low, at about 3.7 V µm(-1), and the field enhancement factor is as high as 4280, so the arrays have promising applications as emitters.
通过在650°C下使SiH₄在镍箔上分解，制备出了硅化镍纳米线阵列。结果表明，硅化镍纳米线由直径约为100 - 200nm的根部和直径约为10 - 50nm的尖端组成。提出了一种镍扩散控制机制来解释硅化镍纳米线的形成。场发射测量表明，硅化镍纳米线阵列的开启场很低，约为3.7V µm⁻¹，场增强因子高达4280，因此该阵列作为发射极具有广阔的应用前景。
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