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基于MEH-PPV/CdSe(ZnS)纳米复合材料的有机发光二极管的陷阱与性能

Traps and performance of MEH-PPV/CdSe(ZnS) nanocomposite-based organic light-emitting diodes.

作者信息

Lee Chih-Wen, Renaud Cedric, Hsu Chain-Shu, Nguyen Thien-Phap

机构信息

Institut des Matériaux Jean Rouxel, Université de Nantes-CNRS, 2 rue de la Houssinière, BP32229, 44322 Nantes, France. Department of Applied Chemistry, National Chiao Tung University, Hsinchu 30010, Taiwan.

出版信息

Nanotechnology. 2008 Nov 12;19(45):455202. doi: 10.1088/0957-4484/19/45/455202. Epub 2008 Oct 8.

Abstract

We report the fabrication and investigations of organic light-emitting diodes (OLEDs) using a composite made by mixing poly[2-methoxy-5(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) with CdSe/ZnS core/shell quantum dots (QDs). The electroluminescence efficiency of the studied devices was found to be improved as compared to devices using MEH-PPV. Moreover, the current density decreased with increasing QD concentration. We checked the effects of QDs on the electrical transport by determining the trap states, making use of the charge-based deep level transient spectroscopy (Q-DLTS) technique. The most striking result obtained is the decrease in trap density when adding QDs to the MEH-PPV polymer film. These results suggest that QDs would heal defects in nanocomposite-based devices and that CdSe/ZnS QDs prevent the trap center formation.

摘要

我们报告了使用聚[2-甲氧基-5-(2'-乙基己氧基)-1,4-亚苯基乙烯基](MEH-PPV)与CdSe/ZnS核壳量子点(QD)混合制成的复合材料制备和研究有机发光二极管(OLED)的情况。研究发现,与使用MEH-PPV的器件相比,所研究器件的电致发光效率有所提高。此外,电流密度随量子点浓度的增加而降低。我们利用基于电荷的深能级瞬态光谱(Q-DLTS)技术,通过确定陷阱态来检查量子点对电传输的影响。得到的最显著结果是,向MEH-PPV聚合物薄膜中添加量子点时陷阱密度降低。这些结果表明,量子点可以修复基于纳米复合材料的器件中的缺陷,并且CdSe/ZnS量子点可防止陷阱中心的形成。

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