Mehra Sonali, Kumar Umesh, Mehta Aarti, Srivastava A K, Chand Suresh, Sharma Shailesh Narain
Photonics Materials and Metrology Division, CSIR-National Physical Laboratory, New Delhi 110012, India.
Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, Uttar Pradesh, India.
J Nanosci Nanotechnol. 2020 Jun 1;20(6):3809-3815. doi: 10.1166/jnn.2020.17506.
The synthesis of PbSe nanoparticles were carried out by colloidal route using lead acetate as starting material with Oleic acid/TOP as capping agents at the optimized growth temperature. The phase and surface analysis of oleic acid/TOP capped PbSe nanocrystallites were studied in detail in this article. Current-voltage characteristics of pristine and lead selenide quantum dots (PbSe QDs) incorporated in poly(2-methoxy,5-(2'-ethylhexyloxy)-p-phenylenevinylene (MEH-PPV) thin films have been studied at different temperatures (306-125 K) in hole only device configuration, i.e., ITO/poly(ethylene-dioxythiophene):polystyrenesulphonate (PEDOT:PSS)/MEH-PPV/Au and ITO/PEDOT:PSS/MEH-PPV:PbSe/Au. It has been found that the presence of PbSe QDs in MEH-PPV results in the modulation of the charge transport mechanism from dual conduction mechanism, i.e., trap and mobility model to only trap model. It signifies that the traps are becoming shallower due to reduction in trap density from 2×10 to 1.2×10 cm as well as trap energy reduces from 74 meV to 62 meV on the incorporation of PbSe QDs.
采用胶体法,以醋酸铅为起始原料,油酸/三辛基膦(TOP)为封端剂,在优化的生长温度下合成了PbSe纳米颗粒。本文详细研究了油酸/TOP封端的PbSe纳米微晶的相和表面分析。在仅空穴器件结构中,即在氧化铟锡(ITO)/聚(3,4-乙撑二氧噻吩):聚苯乙烯磺酸盐(PEDOT:PSS)/聚(2-甲氧基,5-(2'-乙基己氧基)-对苯撑乙烯撑)(MEH-PPV)/金和ITO/PEDOT:PSS/MEH-PPV:PbSe/金结构中,研究了在不同温度(306 - 125 K)下,原始的以及掺入硒化铅量子点(PbSe QDs)的聚(2-甲氧基,5-(2'-乙基己氧基)-对苯撑乙烯撑)(MEH-PPV)薄膜的电流-电压特性。研究发现,MEH-PPV中PbSe QDs的存在导致电荷传输机制从双传导机制,即陷阱和迁移率模型转变为仅陷阱模型。这表明,由于PbSe QDs的掺入,陷阱密度从2×10变为1.2×10 cm,陷阱能量从74 meV降低到62 meV,陷阱变得更浅。