Tanaka Michiyoshi, Tsuda Kenji
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira Aoba-ku, Sendai 980-8577, Japan.
J Electron Microsc (Tokyo). 2011;60 Suppl 1:S245-67. doi: 10.1093/jmicro/dfr038.
This paper reviews the convergent-beam electron diffraction (CBED) technique. Point- and space-group determination methods of ordinary crystals are described, along with an example of the determination method for Sr₃Ru₂O₇. The symmetry determination of one-dimensionally incommensurate crystals and quasicrystals is explained. The large-angle CBED technique, which is indispensable for lattice defect and lattice strain analysis, is also described. A real procedure for lattice strain analysis is provided, using an example of a multilayer Si₁-xGe(x)/Si material. A nanometer-scale crystal structure refinement method and charge density and crystal potential determination method by CBED are briefly described.
本文综述了会聚束电子衍射（CBED）技术。描述了普通晶体的点群和空间群确定方法，并给出了Sr₃Ru₂O₇确定方法的一个例子。解释了一维非公度晶体和准晶体的对称性确定方法。还描述了对晶格缺陷和晶格应变分析必不可少的大角度CBED技术。以多层Si₁-xGe(x)/Si材料为例，给出了晶格应变分析的实际步骤。简要描述了一种纳米尺度晶体结构精修方法以及通过CBED确定电荷密度和晶体势的方法。
