Department of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States.
Nano Lett. 2011 Sep 14;11(9):4003-7. doi: 10.1021/nl2023993. Epub 2011 Aug 23.
Science and technology in the electronics area have always been driven by the development of materials with unique properties and their integration into novel device concepts with the ultimate goal to enable new functionalities in innovative circuit architectures. In particular, a shift in paradigm requires a synergistic approach that combines materials, devices and circuit aspects simultaneously. Here we report the experimental implementation of a novel nonvolatile memory cell that combines silicon nanowires with an organic ferroelectric polymer-PVDF-TrFE-into a new ferroelectric transistor architecture. Our new cell, the ferroelectric transistor random access memory (FeTRAM) exhibits similarities with state-of-the-art ferroelectric random access memories (FeRAMs) in that it utilizes a ferroelectric material to store information in a nonvolatile (NV) fashion but with the added advantage of allowing for nondestructive readout. This nondestructive readout is a result of information being stored in our cell using a ferroelectric transistor instead of a capacitor-the scheme commonly employed in conventional FeRAMs.
电子领域的科学技术一直以来都受到具有独特性能的材料的发展推动，并将这些材料集成到具有新颖器件概念的设备中，最终目的是在创新的电路架构中实现新的功能。特别是，范式的转变需要一种协同的方法，同时结合材料、器件和电路方面。在这里，我们报告了一种新型非易失性存储单元的实验实现，该存储单元将硅纳米线与有机铁电聚合物-PVDF-TrFE-结合到一种新的铁电晶体管架构中。我们的新型单元，铁电晶体管随机存取存储器（FeTRAM）与最先进的铁电随机存取存储器（FeRAM）具有相似之处，因为它利用铁电材料以非易失性（NV）方式存储信息，但具有允许无损读取的额外优势。这种无损读取是由于我们的单元使用铁电晶体管而不是电容器来存储信息的结果-这是传统 FeRAM 中常用的方案。
