Wang Xiaowei, Zhu Chao, Deng Ya, Duan Ruihuan, Chen Jieqiong, Zeng Qingsheng, Zhou Jiadong, Fu Qundong, You Lu, Liu Song, Edgar James H, Yu Peng, Liu Zheng
School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.
Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou, China.
Nat Commun. 2021 Feb 17;12(1):1109. doi: 10.1038/s41467-021-21320-2.
The limited memory retention for a ferroelectric field-effect transistor has prevented the commercialization of its nonvolatile memory potential using the commercially available ferroelectrics. Here, we show a long-retention ferroelectric transistor memory cell featuring a metal-ferroelectric-metal-insulator-semiconductor architecture built from all van der Waals single crystals. Our device exhibits 17 mV dec operation, a memory window larger than 3.8 V, and program/erase ratio greater than 10. Thanks to the trap-free interfaces and the minimized depolarization effects via van der Waals engineering, more than 10 cycles endurance, a 10-year memory retention and sub-5 μs program/erase speed are achieved. A single pulse as short as 100 ns is enough for polarization reversal, and a 4-bit/cell operation of a van der Waals ferroelectric transistor is demonstrated under a 100 ns pulse train. These device characteristics suggest that van der Waals engineering is a promising direction to improve ferroelectronic memory performance and reliability for future applications.
铁电场效应晶体管有限的记忆保持能力阻碍了其利用市售铁电材料实现非易失性存储潜力的商业化。在此，我们展示了一种具有长保持能力的铁电晶体管存储单元，其采用全范德华单晶构建的金属 - 铁电体 - 金属 - 绝缘体 - 半导体结构。我们的器件表现出17 mV dec的操作，大于3.8 V的存储窗口以及大于10的编程/擦除比。得益于无陷阱界面以及通过范德华工程实现的最小化去极化效应，实现了超过10次的循环耐久性、10年的记忆保持能力以及低于5 μs的编程/擦除速度。短至100 ns的单个脉冲就足以实现极化反转，并且在100 ns脉冲序列下展示了范德华铁电晶体管的4位/单元操作。这些器件特性表明，范德华工程是提升铁电存储器性能和可靠性以用于未来应用的一个有前景的方向。
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