Thin Film and Nano-Electronic Laboratory, School of ECE, University of Tehran, Tehran, Iran.
Nanotechnology. 2011 Sep 16;22(37):375204. doi: 10.1088/0957-4484/22/37/375204. Epub 2011 Aug 23.
A low-temperature hydrogenation-assisted sequential deposition and crystallization technique is reported for the preparation of nano-scale silicon quantum dots suitable for light-emitting applications. Radio-frequency plasma-enhanced deposition was used to realize multiple layers of nano-crystalline silicon while reactive ion etching was employed to create nano-scale features. The physical characteristics of the films prepared using different plasma conditions were investigated using scanning electron microscopy, transmission electron microscopy, room temperature photoluminescence and infrared spectroscopy. The formation of multilayered structures improved the photon-emission properties as observed by photoluminescence and a thin layer of silicon oxy-nitride was then used for electrical isolation between adjacent silicon layers. The preparation of light-emitting diodes directly on glass substrates has been demonstrated and the electroluminescence spectrum has been measured.
一种低温加氢辅助的顺序沉积和结晶技术被报道用于制备适合发光应用的纳米级硅量子点。射频等离子体增强沉积用于实现多层纳米晶硅，而反应离子刻蚀用于制造纳米级特征。使用不同的等离子体条件制备的薄膜的物理特性使用扫描电子显微镜、透射电子显微镜、室温光致发光和红外光谱进行了研究。多层结构的形成改善了光发射性能，如光致发光所观察到的，然后使用一层薄的硅氧氮化物在相邻的硅层之间进行电隔离。已经证明了直接在玻璃衬底上制备发光二极管，并且已经测量了电致发光光谱。
