Department of Chemical and Biological Engineering, Korea University, Seoul, Korea.
Nanotechnology. 2011 Sep 23;22(38):385302. doi: 10.1088/0957-4484/22/38/385302. Epub 2011 Aug 25.
We describe the fabrication and electrical performance of p-n homo-junction diode arrays of horizontally aligned single walled carbon nanotubes (SWCNTs). Horizontally aligned SWCNTs grown on stable temperature-cut quartz with a density of ∼ 6 SWCNTs µm(-1) were transferred onto a SiO(2)/Si substrate. After the electrical breakdown, aligned SWCNT field effect transistors (FETs) showed unipolar p-type characteristics with a large current on/off ratio of 10(6) at 1 V and a hole mobility per tube of 1500 cm(2) V(-1) s(-1). Spin-coating of polyethyleneimine (PEI) onto p-type SWCNT FETs showed the n-type transfer characteristics. Patterning of spin-coated PEI film enabled the fabrication of p-n homo-junction arrays of aligned SWCNTs in an easy way, where the rectifying behavior was observed with a rectification ratio of ∼ 10(4) at ± 2 V. A comparative study with a p-n homo-junction of random networks of SWCNTs confirmed the advantage of aligned SWCNTs for applications in high performance electronic devices.
我们描述了 p-n 同质结二极管阵列的制造和电性能的水平排列的单壁碳纳米管（SWCNTs）。在稳定的温度切割石英上生长的水平排列的 SWCNTs 密度约为 6 SWCNTs µm（-1）被转移到 SiO（2）/ Si 衬底上。在电击穿后，对齐的 SWCNT 场效应晶体管（FET）表现出单极性 p 型特性，在 1 V 时具有 10（6）的大电流开/关比，并且每管的空穴迁移率为 1500 cm（2）V（-1）s（-1）。聚亚乙基亚胺（PEI）的旋涂到 p 型 SWCNT FET 上显示出 n 型转移特性。旋涂的 PEI 膜的图案化使得以简单的方式制造了对齐的 SWCNTs 的 p-n 同质结阵列，其中在± 2 V 时观察到整流行为，整流比约为 10（4）。与 SWCNTs 的随机网络的 p-n 同质结的比较研究证实了对齐的 SWCNTs 在高性能电子器件应用中的优势。
