SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
ACS Nano. 2011 Dec 27;5(12):9817-23. doi: 10.1021/nn203391h. Epub 2011 Nov 3.
Semiconductors with higher carrier mobility and carrier density are required to fabricate a p-n junction diode for high-speed device operation and high-frequency signal processing. Here, we use a chemically doped semiconducting single-walled carbon nanotube (SWCNT) random network for a field effect transistor (FET) and demonstrate a rectifier operated at a wide range of frequencies by fabricating a p-n junction diode. The p-n diode was fabricated by using a pristine p-type SWCNT-FET where half was covered by SiO(2) and the other half was chemically doped by using benzyl viologen molecules, which was converted into an n-type channel. The half-wave rectifier of the random network SWCNT p-n junction diode clearly highlights the device operation under high input signal frequencies up to 10 MHz with very low output distortion, which a commercial silicon p-n junction diode cannot access. These results indicate that the random network SWCNT p-n junction diodes can be used as building blocks of complex circuits in a range of applications in microelectronics, optoelectronics, sensors, and other systems.
需要具有更高载流子迁移率和载流子密度的半导体来制造 p-n 结二极管，以实现高速器件操作和高频信号处理。在这里，我们使用化学掺杂的半导体单壁碳纳米管（SWCNT）随机网络作为场效应晶体管（FET），并通过制造 p-n 结二极管来演示在宽频率范围内工作的整流器。p-n 二极管是通过使用原始的 p 型 SWCNT-FET 制造的，其中一半被 SiO(2)覆盖，另一半通过苯并-viologen 分子进行化学掺杂，从而转化为 n 型通道。随机网络 SWCNT p-n 结二极管的半波整流器清楚地突出了在高达 10 MHz 的高输入信号频率下的器件操作，具有非常低的输出失真，这是商业硅 p-n 结二极管无法实现的。这些结果表明，随机网络 SWCNT p-n 结二极管可用作微电子学、光电学、传感器和其他系统中复杂电路的构建块。
