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同侧声电刺激掩蔽。

Ipsilateral masking between acoustic and electric stimulations.

机构信息

Department of Biomedical Engineering, University of California, Irvine, CA 92617, USA.

出版信息

J Acoust Soc Am. 2011 Aug;130(2):858-65. doi: 10.1121/1.3605294.

Abstract

Residual acoustic hearing can be preserved in the same ear following cochlear implantation with minimally traumatic surgical techniques and short-electrode arrays. The combined electric-acoustic stimulation significantly improves cochlear implant performance, particularly speech recognition in noise. The present study measures simultaneous masking by electric pulses on acoustic pure tones, or vice versa, to investigate electric-acoustic interactions and their underlying psychophysical mechanisms. Six subjects, with acoustic hearing preserved at low frequencies in their implanted ear, participated in the study. One subject had a fully inserted 24 mm Nucleus Freedom array and five subjects had Iowa/Nucleus hybrid implants that were only 10 mm in length. Electric masking data of the long-electrode subject showed that stimulation from the most apical electrodes produced threshold elevations over 10 dB for 500, 625, and 750 Hz probe tones, but no elevation for 125 and 250 Hz tones. On the contrary, electric stimulation did not produce any electric masking in the short-electrode subjects. In the acoustic masking experiment, 125-750 Hz pure tones were used to acoustically mask electric stimulation. The acoustic masking results showed that, independent of pure tone frequency, both long- and short-electrode subjects showed threshold elevations at apical and basal electrodes. The present results can be interpreted in terms of underlying physiological mechanisms related to either place-dependent peripheral masking or place-independent central masking.

摘要

在采用微创外科技术和短电极阵列的情况下,耳蜗植入后同一耳可以保留残余的声音听力。联合电-声刺激显著提高了人工耳蜗的性能,特别是在噪声环境下的言语识别能力。本研究通过电脉冲对声音纯音进行同时掩蔽,或反之亦然,以研究电-声相互作用及其潜在的心理物理机制。六名受试者在植入耳的低频保留了声音听力,参与了这项研究。一名受试者植入了 Nucleus Freedom 24 毫米的完全插入式电极阵列,五名受试者植入了长度仅为 10 毫米的 Iowa/Nucleus 混合式植入体。长电极受试者的电掩蔽数据表明,来自最顶端电极的刺激会使 500、625 和 750 Hz 探测音的阈值升高 10 dB 以上,但 125 和 250 Hz 音的阈值没有升高。相反,短电极受试者的电刺激不会产生任何电掩蔽。在声学掩蔽实验中,使用 125-750 Hz 的纯音对电刺激进行声学掩蔽。声学掩蔽结果表明,无论纯音频率如何,长电极和短电极受试者在顶端和基底电极处都表现出阈值升高。本研究结果可以用与位置相关的外围掩蔽或位置无关的中枢掩蔽相关的潜在生理机制来解释。

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Ipsilateral masking between acoustic and electric stimulations.同侧声电刺激掩蔽。
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