Pinzón Julio R, Villalta-Cerdas Adrián, Echegoyen Luis
Department of Chemistry, University of Texas, El Paso, TX, USA.
Top Curr Chem. 2012;312:127-74. doi: 10.1007/128_2011_176.
With the constant growing complexity of electronic devices, the top-down approach used with silicon based technology is facing both technological and physical challenges. Carbon based nanomaterials are good candidates to be used in the construction of electronic circuitry using a bottom-up approach, because they have semiconductor properties and dimensions within the required physical limit to establish electrical connections. The unique electronic properties of fullerenes for example, have allowed the construction of molecular rectifiers and transistors that can operate with more than two logical states. Carbon nanotubes have shown their potential to be used in the construction of molecular wires and FET transistors that can operate in the THz frequency range. On the other hand, graphene is not only the most promising material for replacing ITO in the construction of transparent electrodes but it has also shown quantum Hall effect and conductance properties that depend on the edges or chemical doping. The purpose of this review is to present recent developments on the utilization carbon nanomaterials in molecular electronics.
随着电子设备的复杂性不断增加,基于硅基技术的自上而下方法正面临技术和物理方面的挑战。碳基纳米材料是采用自下而上方法构建电子电路的良好候选材料,因为它们具有半导体特性且尺寸在建立电连接所需的物理极限范围内。例如,富勒烯独特的电子特性使得能够构建可在两种以上逻辑状态下运行的分子整流器和晶体管。碳纳米管已显示出在构建可在太赫兹频率范围内运行的分子导线和场效应晶体管方面的潜力。另一方面,石墨烯不仅是在透明电极构建中替代铟锡氧化物(ITO)最有前景的材料,而且还表现出取决于边缘或化学掺杂的量子霍尔效应和电导特性。本综述的目的是介绍碳纳米材料在分子电子学中的利用方面的最新进展。