在纳米掺铝氧化锌薄膜中观察到较大的横向光伏效应。

Large lateral photovoltaic effect observed in nano Al-doped ZnO films.

作者信息

Lu Jing, Wang Hui

机构信息

Department of Physics, the State Key Laboratory on Local Fiber-Optical Communication Networks and Advanced Optical Communication Systems, Shanghai Jiao Tong University, 800 Dongchuan Rd, Shanghai 200240, China.

出版信息

Opt Express. 2011 Jul 18;19(15):13806-11. doi: 10.1364/OE.19.013806.

DOI:10.1364/OE.19.013806

PMID:21934741

Abstract

Zinc oxide (ZnO), including a variety of metal-doped ZnO, as one kind of most important photoelectric materials, has been widely investigated and received enormous attention for a series of applications. In this work, we report a new finding which we call as lateral photovoltaic effect (LPE) in a nano Al-doped ZnO (ZAO) film based on ZAO/SiO2/Si homo-heterostructure. This large and stable LPE observed in ZAO is an important supplement to the existing ZnO properties. In addition, all data and analyses demonstrate ZAO film can also be a good candidate for new type position-sensitive detector (PSD) devices.

摘要

氧化锌（ZnO），包括各种金属掺杂的ZnO，作为最重要的光电材料之一，已被广泛研究并因其一系列应用而受到极大关注。在这项工作中，我们报告了一项新发现，即在基于ZAO/SiO2/Si同质异质结构的纳米铝掺杂氧化锌（ZAO）薄膜中存在一种我们称为横向光伏效应（LPE）的现象。在ZAO中观察到的这种大且稳定的LPE是对现有ZnO特性的重要补充。此外，所有数据和分析表明，ZAO薄膜也可以成为新型位置敏感探测器（PSD）器件的良好候选材料。