非磁性硅基肖特基结中横向光伏效应的尺寸依赖性磁调谐

Size-dependent magnetic tuning of lateral photovoltaic effect in nonmagnetic Si-based Schottky junctions.

作者信息

Zhou Peiqi, Gan Zhikai, Huang Xu, Mei Chunlian, Xia Yuxing, Wang Hui

机构信息

State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, and Key Laboratory of Thin Film and microfabrication of the Ministry of Education, Shanghai JiaoTong University, 800 Dongchuan Rd, Shanghai 200240, P. R. China.

出版信息

Sci Rep. 2017 Apr 11;7:46377. doi: 10.1038/srep46377.

DOI:10.1038/srep46377

PMID:28397819

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5387727/

Abstract

In this article, we report a magnetic tuning lateral photovoltaic effect (LPE) in a nonmagnetic Si-based Schottky junctions. In the magnetic field intensity range of 0 to 1.6 T, the variation amplitude of LPE sensitivity is as high as 94.8%, the change of LPV is and the change rate of lateral photo-voltage even reaches 520 mV/T at 1.5 T, which is apparently higher than the results of previous reported researches in magnetic materials. This effect is attributed to the combined result of the influence of magnetic field on diffusion current and the rectification property of our anisotropic structure. This work may expand the application of LPE in magnetism field such as magnetic sensor and magnetoresistance, and it suggests a new way to investigate the carrier transport in Schottky junctions under magnetic field.

摘要

在本文中，我们报道了非磁性硅基肖特基结中的磁调谐横向光伏效应（LPE）。在0至1.6 T的磁场强度范围内，LPE灵敏度的变化幅度高达94.8%，横向光伏（LPV）发生变化，并且在1.5 T时横向光电压的变化率甚至达到520 mV/T，这明显高于先前报道的磁性材料研究结果。这种效应归因于磁场对扩散电流的影响以及我们的各向异性结构的整流特性的综合结果。这项工作可能会扩大LPE在磁场中的应用，如磁传感器和磁阻，并为研究磁场下肖特基结中的载流子输运提供了一种新方法。