在铬纳米薄膜中观察到的横向光伏效应和电子输运。

Lateral photovoltaic effect and electron transport observed in Cr nano-film.

作者信息

Liu Shuai, Xie Xin, Wang Hui

出版信息

Opt Express. 2014 May 19;22(10):11627-32. doi: 10.1364/OE.22.011627.

DOI:10.1364/OE.22.011627

Abstract

Lateral photovoltaic effect (LPE) can be used in position-sensitive detectors (PSDs) and has a wide application in a variety of optical transducers and sensors. In this report, a large LPE with sensitivity of 42mV/mm is observed in metal-oxide-semiconductor (MOS) structure of Cr/SiO(2)/Si. Through measuring current-voltage characteristics, we find that electron transport property in dark plays a key role and an appropriate metal thickness is crucial for obtaining a large LPE. This result is useful for applications and may explore a way to study the electron transport mechanism in nano-films' MOS structures.

摘要

横向光伏效应（LPE）可用于位置敏感探测器（PSD），并在各种光学换能器和传感器中有着广泛应用。在本报告中，在Cr/SiO(2)/Si的金属氧化物半导体（MOS）结构中观察到了灵敏度为42mV/mm的大横向光伏效应。通过测量电流-电压特性，我们发现暗态下的电子传输特性起着关键作用，并且合适的金属厚度对于获得大横向光伏效应至关重要。这一结果对应用很有用，并且可能为研究纳米薄膜MOS结构中的电子传输机制探索出一条途径。