Institute of Micro/Nanotechnology, Old Dominion University, Norfolk, VA 23529, USA.
J Colloid Interface Sci. 2012 Jan 1;365(1):326-8. doi: 10.1016/j.jcis.2011.08.079. Epub 2011 Sep 3.
Tuning surface charge property by a floating gate field effect transistor (FGFET) is proposed and analyzed for the first time. The FGFET has an additional floating gate electrode embedded inside the dielectric channel wall and is superior to the conventional FET to tune the surface charge property of a dielectric material in contact with an aqueous solution.
首次提出并分析了通过浮栅场效应晶体管（FGFET）来调节表面电荷特性的方法。FGFET 在介电通道壁内部嵌入了一个额外的浮置栅电极，与传统 FET 相比，它更有利于调节与水溶液接触的介电材料的表面电荷特性。
