Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University, University Park, PA 16802, USA.
Nanotechnology. 2011 Nov 4;22(44):445401. doi: 10.1088/0957-4484/22/44/445401. Epub 2011 Oct 7.
Single nanowire radial junction solar cell devices were fabricated using Si nanowires synthesized by Al-catalyzed vapor-liquid-solid growth of the p(+) core (Al auto-doping) and thin film deposition of the n(+)-shell at temperatures below 650 °C. Short circuit current densities of 11.7 mA cm(-2) were measured under 1-sun AM1.5G illumination, showing enhanced optical absorption. The power conversion efficiencies were limited to < 1% by the low open circuit voltage and fill factor of the devices, which was attributed to junction shunt leakage promoted by the high p(+)/n(+) doping. This demonstration of a radial junction device represents an important advance in the use of Al-catalyzed Si nanowire growth for low cost photovoltaics.
采用 Al 催化的汽-液-固（VLS）生长法在 p(+)芯（Al 自掺杂）和低于 650°C 的温度下进行 n(+)-壳层薄膜沉积，制备了单根纳米线径向结太阳能电池器件。在 1 个太阳 AM1.5G 光照下，测量得到的短路电流密度为 11.7 mA cm(-2)，显示出增强的光吸收。由于结旁路泄漏，开路电压和填充因子较低，器件的功率转换效率限制在 <1%，这归因于高 p(+)/n(+)掺杂促进了结旁路泄漏。这种径向结器件的演示代表了在使用 Al 催化的 Si 纳米线生长制备低成本光伏器件方面的重要进展。
