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汽液固生长硅线阵光电阴极的能量转换特性。

Energy-conversion properties of vapor-liquid-solid-grown silicon wire-array photocathodes.

机构信息

Kavli Nanoscience Institute and Beckman Institute, 1200 East California Boulevard, California Institute of Technology, Pasadena, CA 91125, USA.

出版信息

Science. 2010 Jan 8;327(5962):185-7. doi: 10.1126/science.1180783.

Abstract

Silicon wire arrays, though attractive materials for use in photovoltaics and as photocathodes for hydrogen generation, have to date exhibited poor performance. Using a copper-catalyzed, vapor-liquid-solid-growth process, SiCl4 and BCl3 were used to grow ordered arrays of crystalline p-type silicon (p-Si) microwires on p+-Si(111) substrates. When these wire arrays were used as photocathodes in contact with an aqueous methyl viologen(2+/+) electrolyte, energy-conversion efficiencies of up to 3% were observed for monochromatic 808-nanometer light at fluxes comparable to solar illumination, despite an external quantum yield at short circuit of only 0.2. Internal quantum yields were at least 0.7, demonstrating that the measured photocurrents were limited by light absorption in the wire arrays, which filled only 4% of the incident optical plane in our test devices. The inherent performance of these wires thus conceptually allows the development of efficient photovoltaic and photoelectrochemical energy-conversion devices based on a radial junction platform.

摘要

硅线阵列虽然是用于光伏和作为光电阴极产生氢气的有吸引力的材料,但迄今为止其性能一直不佳。本工作使用铜催化的气-液-固生长工艺,在 p+型 Si(111)衬底上生长了有序的 p 型晶体硅(p-Si)微米线阵列。当这些线阵列作为光电阴极与含有甲紫精(2+/+)的水性电解质接触时,尽管短路时的外量子效率仅为 0.2,但在与太阳光相当的通量下,对于单色 808nm 光,观察到高达 3%的能量转换效率。内部量子效率至少为 0.7,这表明测量的光电流受到线阵列中光吸收的限制,在我们的测试器件中,线阵列仅填充了入射光平面的 4%。因此,这些线的固有性能从概念上允许开发基于径向结平台的高效光伏和光电化学能量转换器件。

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