来自[110] Cr⁴⁺:YAG被动调Q微芯片激光器的兆瓦级紫外输出。

Megawatt level UV output from [110] Cr⁴⁺:YAG passively Q-switched microchip laser.

作者信息

Bhandari Rakesh, Taira Takunori

机构信息

Institute for Molecular Science, Laser Research Center, 38 Nishigonaka, Myodaiji, Okazaki 444-8585, Japan.

出版信息

Opt Express. 2011 Nov 7;19(23):22510-4. doi: 10.1364/OE.19.022510.

DOI:10.1364/OE.19.022510

PMID:22109129

Abstract

Recent development of megawatt peak power, giant pulse microchip lasers has opened new opportunities for efficient wavelength conversion, provided the output of the microchip laser is linearly polarized. We obtain > 2 MW peak power, 260 ps, 100 Hz pulses at 266 nm by fourth harmonic conversion of a linearly polarized Nd:YAG microchip laser that is passively Q-switched with [110] cut Cr⁴⁺:YAG. The SHG and FHG conversion efficiencies are 85% and 51%, respectively.

摘要

兆瓦级峰值功率巨脉冲微芯片激光器的最新发展为高效波长转换带来了新机遇，前提是微芯片激光器的输出为线偏振光。通过对采用[110]切割的Cr⁴⁺:YAG被动调Q的线偏振Nd:YAG微芯片激光器进行四波混频，我们在266nm处获得了峰值功率>2MW、脉宽260ps、重复频率100Hz的脉冲。二次谐波产生（SHG）和三次谐波产生（FHG）的转换效率分别为85%和51%。