Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Kouto, Sayo, Hyogo 679-5198, Japan.
J Synchrotron Radiat. 2011 Nov;18(Pt 6):879-84. doi: 10.1107/S0909049511034418. Epub 2011 Sep 21.
A system for angle-resolved photoemission spectroscopy (ARPES) of small single crystals with sizes down to 100 µm has been developed. Soft X-ray synchrotron radiation with a spot size of ∼40 µm × 65 µm at the sample position is used for the excitation. Using this system an ARPES measurement has been performed on a Si crystal of size 120 µm × 100 µm × 80 µm. The crystal was properly oriented on a sample stage by measuring the Laue spots. The crystal was cleaved in situ with a microcleaver at 100 K. The cleaved surface was adjusted to the beam spot using an optical microscope. Consequently, clear band dispersions along the Γ-X direction reflecting the bulk electronic states were observed with a photon energy of 879 eV.
已开发出一种用于小尺寸单晶体（尺寸低至 100μm）角分辨光电子能谱（ARPES）的系统。在样品位置处，使用光斑尺寸约为 40μm×65μm 的软 X 射线同步辐射作为激发源。使用该系统，对尺寸为 120μm×100μm×80μm 的 Si 晶体进行了 ARPES 测量。通过测量劳厄斑点，在样品台上对晶体进行了适当的取向。在 100 K 下，使用微切割器对晶体进行原位切割。使用光学显微镜对切割表面进行调整，使其与光斑对准。因此，在光子能量为 879 eV 时，观察到了沿 Γ-X 方向反映体电子态的清晰能带色散。
