De Marchi Andrea, Giaretto Valter
Dipartimento di Elettronica, Politecnico di Torino, Torino, Italy.
Rev Sci Instrum. 2011 Oct;82(10):104904. doi: 10.1063/1.3656074.
The heat diffusion related f(-1/2) slow decay in the frequency domain transfer function of thermoelectric devices introduces a bias in figure of merit measurement methods that do not take it into account. The bias can range from less than 1% to more than 20% depending on the device. Harman type methods are not immune. Neither is the simple single measurement procedure proposed here on the basis of a complex thermal impedance analysis of the device, but in this case the supporting theory allows evaluating and correcting for the bias with documented accuracy. To this aim, both a theoretical approach based on a priori knowledge of the device and an experimental one based on theory guided measurements are possible and are described in the paper. Typical residual Type B uncertainties after correction can be below 10% of the bias.
热电器件频域传递函数中与热扩散相关的f(-1/2)缓慢衰减，会在未考虑该因素的优值测量方法中引入偏差。根据器件不同，偏差范围可从小于1%到超过20%。哈曼型方法也不能幸免。本文基于器件复热阻抗分析提出的简单单次测量程序同样如此，但在这种情况下，支撑理论允许以记录的精度评估和校正偏差。为此，基于器件先验知识的理论方法和基于理论指导测量的实验方法都是可行的，本文对此进行了描述。校正后的典型B类残余不确定度可低于偏差的10%。
