Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble Cedex 9, France.
Nanotechnology. 2011 Nov 25;22(47):475704. doi: 10.1088/0957-4484/22/47/475704. Epub 2011 Nov 4.
Carrier depletion and transport in a single ZnO nanowire Schottky device have been investigated at 5 K, using cathodoluminescence measurements. An exciton diffusion length of 200 nm has been determined along the nanowire axis. The depletion width is found to increase linearly with the reverse bias. The origin of this unusual dependence in semiconductor material is discussed in terms of charge location and dimensional effects on the screening of the junction electric field.
在 5K 下，通过荧光测量研究了单个 ZnO 纳米线肖特基器件中的载流子耗尽和输运。沿纳米线轴确定了 200nm 的激子扩散长度。发现耗尽宽度随反向偏压线性增加。根据电荷位置和尺寸效应对结电场屏蔽的影响，讨论了半导体材料中这种不寻常的依赖关系的起源。
