氧化钽忆阻器的亚纳秒级开关。
Sub-nanosecond switching of a tantalum oxide memristor.
机构信息
Nanoelectronics Research Group, Hewlett-Packard Labs, 1501 Page Mill Road, Palo Alto, CA 94304, USA.
出版信息
Nanotechnology. 2011 Dec 2;22(48):485203. doi: 10.1088/0957-4484/22/48/485203. Epub 2011 Nov 9.
We report sub-nanosecond switching of a metal-oxide-metal memristor utilizing a broadband 20 GHz experimental setup developed to observe fast switching dynamics. Set and reset operations were successfully performed in the tantalum oxide memristor using pulses with durations of 105 and 120 ps, respectively. Reproducibility of the sub-nanosecond switching was also confirmed as the device switched over consecutive cycles.
我们报告了一种金属-氧化物-金属忆阻器的亚纳秒级开关，该忆阻器利用了一个宽带 20GHz 的实验设置，该设置用于观察快速开关动力学。使用持续时间分别为 105ps 和 120ps 的脉冲，成功地在氧化钽忆阻器中进行了设置和重置操作。亚纳秒级开关的可重复性也得到了确认，因为该器件在连续的循环中进行了切换。
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