Garlapati Suresh Kumar, Simanjuntak Firman Mangasa, Stathopoulos Spyros, A Syed Jalaluddeen, Napari Mari, Prodromakis Themis
Department of Materials Science and Metallurgical Engineering, Indian Institute of Technology Hyderabad, Hyderabad, 502285, India.
School of Electronics & Computer Science, University of Southampton, Southampton, SO17 1BJ, UK.
Sci Rep. 2024 Jun 19;14(1):14163. doi: 10.1038/s41598-024-64662-9.
Brain-inspired resistive random-access memory (RRAM) technology is anticipated to outperform conventional flash memory technology due to its performance, high aerial density, low power consumption, and cost. For RRAM devices, metal oxides are exceedingly investigated as resistive switching (RS) materials. Among different oxides, tin oxide (SnO) received minimal attention, although it possesses excellent electronic properties. Herein, we demonstrate compliance-free, analog resistive switching behavior with several stable states in Ti/Pt/SnO/Pt RRAM devices. The compliance-free nature might be due to the high internal resistance of SnO films. The resistance of the films was modulated by varying Ar/O ratio during the sputtering process. The I-V characteristics revealed a well-expressed high resistance state (HRS) and low resistance states (LRS) with bipolar memristive switching mechanism. By varying the pulse amplitude and width, different resistance states have been achieved, indicating the analog switching characteristics of the device. Furthermore, the devices show excellent retention for eleven states over 1000 s with an endurance of > 100 cycles.
受大脑启发的电阻式随机存取存储器（RRAM）技术因其性能、高空隙密度、低功耗和低成本，有望超越传统闪存技术。对于RRAM器件，金属氧化物作为电阻开关（RS）材料受到了广泛研究。在不同的氧化物中，氧化锡（SnO）虽然具有优异的电子性能，但受到的关注却很少。在此，我们展示了Ti/Pt/SnO/Pt RRAM器件中无电流限制、具有多个稳定状态的模拟电阻开关行为。无电流限制的特性可能归因于SnO薄膜的高内阻。通过在溅射过程中改变Ar/O比来调制薄膜的电阻。I-V特性显示出具有双极忆阻开关机制的明显高阻态（HRS）和低阻态（LRS）。通过改变脉冲幅度和宽度，实现了不同的电阻状态，表明该器件具有模拟开关特性。此外，该器件在1000 s内对十一种状态表现出优异的保持性，耐久性超过100次循环。
