Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan.
Chem Commun (Camb). 2012 Jan 11;48(3):383-5. doi: 10.1039/c1cc15945c. Epub 2011 Nov 14.
Bistable resistive switching characteristics obtained using a supramolecular hybrid route to hydrogen-bonded block copolymers (BCP) and graphene oxide (GO) as charge storage materials are reported for write-once-read-many-times (WORM) memory devices.
报道了使用超分子杂化途径制备的氢键嵌段共聚物（BCP）和氧化石墨烯（GO）作为电荷存储材料的双稳定电阻开关特性，用于可多次写入一次读取（WORM）存储器件。
