Preparation of Graphene Oxide/Poly(1-vinylimidazole) Composites for Resistive Switching Memory.

In this study, a photochemical polymerization using graphene oxide (GO) as an initiator generated a new composite film with poly(1-vinylimidazole) (PVI) covered the GO sheets. Atomic force microscopy and infrared spectroscopy revealed the uniform layering of the PVI on the sheets. An ITO/GO-PVI/Cu device was fabricated from this synthesized film, and it exhibited a write-once-read-many-times (WORM) memory functionality with resistance switching under an applied voltage of -3.2 V. The ON/OFF current ratio of the device reached 106. An analysis of the current-voltage characteristics of the device indicated that the ON-state charge transport followed Ohmic conduction with metallic behavior, while the OFF-state charge transport was dominated by a trap-limited space charge limited conduction.