Lin Jinrui, Ni Xiuyuan
State Key Laboratory of Molecular Engineering of Polymer, Department of Macromolecular Science, Fudan University, Shanghai 200433, China.
J Nanosci Nanotechnol. 2018 Apr 1;18(4):2601-2608. doi: 10.1166/jnn.2018.14320.
In this study, a photochemical polymerization using graphene oxide (GO) as an initiator generated a new composite film with poly(1-vinylimidazole) (PVI) covered the GO sheets. Atomic force microscopy and infrared spectroscopy revealed the uniform layering of the PVI on the sheets. An ITO/GO-PVI/Cu device was fabricated from this synthesized film, and it exhibited a write-once-read-many-times (WORM) memory functionality with resistance switching under an applied voltage of -3.2 V. The ON/OFF current ratio of the device reached 106. An analysis of the current-voltage characteristics of the device indicated that the ON-state charge transport followed Ohmic conduction with metallic behavior, while the OFF-state charge transport was dominated by a trap-limited space charge limited conduction.
在本研究中，以氧化石墨烯（GO）作为引发剂的光化学聚合反应生成了一种新的复合薄膜，其中聚（1-乙烯基咪唑）（PVI）覆盖在GO片层上。原子力显微镜和红外光谱显示PVI在片层上均匀分层。由这种合成薄膜制备了ITO/GO-PVI/Cu器件，该器件在-3.2 V的施加电压下表现出具有电阻切换的一次写入多次读取（WORM）存储功能。该器件的开/关电流比达到106。对该器件电流-电压特性的分析表明，导通状态下的电荷传输遵循具有金属行为的欧姆传导，而截止状态下的电荷传输则以陷阱限制的空间电荷限制传导为主。
