HLJ Province Key Laboratories of Senior-education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China.
Communication and Electronics Engineering Institute, Qiqihar University, Qiqihar, 161006, China.
Sci Rep. 2017 Jun 21;7(1):3938. doi: 10.1038/s41598-017-04299-z.
Nonvolatile ternary memory devices were fabricated using the composite of polystyrene (PS) and graphene oxide(GO) as active layers, which have an reliable intermediate state. The current-voltage (I-V) curves of the indium tin oxide (ITO)/PS+GO/Al device under the external applied voltages exhibited current tri-stability with three conductivity states, which clearly revealed ternary memory performance. Under the stimulus of the external voltage, a stable intermediate conductivity state was observed. In the write-read-erase-read test, the ITO/PS+GO/Al device exhibited rewritable, nonvolatile, ternary memory properties. The resistance as functions of the time indicated that three conductivity states held for 2 × 10 s, suggesting that the good stability of the ITO/PS+GO/Al devices. HRTEM and XPS observation indicated that the Al top electrode reacted with oxygen within in GO.
使用聚苯乙烯 (PS) 和氧化石墨烯 (GO) 的复合材料作为有源层制造了非易失性三元存储器器件，其具有可靠的中间状态。在外部施加电压下，铟锡氧化物 (ITO)/PS+GO/Al 器件的电流-电压 (I-V) 曲线表现出具有三种电导率状态的电流三稳定性，这清楚地显示出了三元存储性能。在外部电压的刺激下，观察到了稳定的中间电导率状态。在写入-读取-擦除-读取测试中，ITO/PS+GO/Al 器件表现出可重写、非易失性、三元存储特性。电阻随时间的变化表明，三种电导率状态持续了 2×10 s，这表明 ITO/PS+GO/Al 器件具有良好的稳定性。HRTEM 和 XPS 观察表明，Al 顶电极与 GO 内的氧发生了反应。
