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增强的功率因数和超低晶格热导率诱导BiCuTeO/BiCuSeO超晶格的高热电性能

Enhanced Power Factor and Ultralow Lattice Thermal Conductivity Induced High Thermoelectric Performance of BiCuTeO/BiCuSeO Superlattice.

作者信息

Yang Xuewen, Sun Zhiqian, Ge Guixian, Yang Jueming

机构信息

College of Science/Xinjiang Production & Construction Corps Key Laboratory of Advanced Energy Storage Materials and Technology, Shihezi University, Shihezi 832000, China.

Xinjiang Production and Construction Corps Key Laboratory of Oasis Town and Mountain-Basin System Ecology, Shihezi University, Shihezi 832000, China.

出版信息

Materials (Basel). 2023 Jun 11;16(12):4318. doi: 10.3390/ma16124318.

DOI:10.3390/ma16124318
PMID:37374502
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10305665/
Abstract

Based on the first-principles calculations, the electronic structure and transport properties of BiMChO (M=Cu and Ag, Ch=S, Se, and Te) superlattices have been studied. They are all semiconductors with indirect band gaps. The increased band gap and decreased band dispersion near the valence band maximum (VBM) lead to the lowest electrical conductivity and the lowest power factor for -type BiAgSeO/BiCuSeO. The band gap value of BiCuTeO/BiCuSeO decreases because of the up-shifted Fermi level of BiCuTeO compared with BiCuSeO, which would lead to relatively high electrical conductivity. The converged bands near VBM can produce a large effective mass of density of states (DOS) without explicitly reducing the mobility for -type BiCuTeO/BiCuSeO, which means a relatively large Seebeck coefficient. Therefore, the power factor increases by 15% compared with BiCuSeO. The up-shifted Fermi level leading to the band structure near VBM is dominated by BiCuTeO for the BiCuTeO/BiCuSeO superlattice. The similar crystal structures bring out the converged bands near VBM along the high symmetry points Γ-X and Z-R. Further studies show that BiCuTeO/BiCuSeO possesses the lowest lattice thermal conductivity among all the superlattices. These result in the value of -type BiCuTeO/BiCuSeO increasing by over 2 times compared with BiCuSeO at 700 K.

摘要

基于第一性原理计算,研究了BiMChO(M = Cu和Ag,Ch = S、Se和Te)超晶格的电子结构和输运性质。它们均为具有间接带隙的半导体。价带最大值(VBM)附近带隙增大且能带色散减小,导致n型BiAgSeO/BiCuSeO的电导率最低且功率因子最小。与BiCuSeO相比,BiCuTeO的费米能级上移,使得BiCuTeO/BiCuSeO的带隙值减小,这将导致相对较高的电导率。对于n型BiCuTeO/BiCuSeO,VBM附近收敛的能带可以在不显着陆降低迁移率的情况下产生较大的态密度有效质量,这意味着相对较大的塞贝克系数。因此,与BiCuSeO相比,功率因子提高了15%。对于BiCuTeO/BiCuSeO超晶格,导致VBM附近能带结构的费米能级上移由BiCuTeO主导。相似的晶体结构使得沿着高对称点Γ-X和Z-R在VBM附近出现收敛的能带。进一步研究表明,BiCuTeO/BiCuSeO在所有超晶格中具有最低的晶格热导率。这使得n型BiCuTeO/BiCuSeO在700 K时的ZT值相比BiCuSeO提高了2倍以上。

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