Laboratory of Structural Steel, Functional Materials and Heat Treatment Processing Technology, Beijing Institute of Aeronautical Materials, Beijing 100095, China.
Chem Commun (Camb). 2013 Sep 21;49(73):8075-7. doi: 10.1039/c3cc44578j. Epub 2013 Aug 2.
Upon 20% Te substitution, the band gap decreases from 0.8 eV to 0.65 eV. Rising temperature promotes minority carrier jumps across the band gap, thereby improving electrical conductivity. With low thermal conductivity and large Seebeck coefficients, a remarkable ZT of 0.71 at 873 K is achieved for BiCuSe0.94Te0.06O.
在 20% Te 取代后，带隙从 0.8eV 降低到 0.65eV。温度升高促进了少数载流子跨越能带隙的跃迁，从而提高了电导率。BiCuSe0.94Te0.06O 具有低热导率和较大的 Seebeck 系数，在 873K 时实现了显著的 ZT 值为 0.71。
