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强受限CdSe量子点中的尺寸选择性激子跃迁能量

Size selective excitonic transition energies in strongly confined CdSe quantum dots.

作者信息

Thupakula Umamahesh, Khan Ali Hossain, Bal Jayanta Kumar, Ariga Katsuhiko, Acharya Somobrata

机构信息

Centre for Advanced Materials (CAM), Indian Association for the Cultivation of Science, Jadavpur Kolkata 700032, India.

出版信息

J Nanosci Nanotechnol. 2011 Sep;11(9):7709-14. doi: 10.1166/jnn.2011.5120.

Abstract

We report on the synthesis of CdSe nanocrystal quantum dots (QDs) of different radii (R). Size dependent optical properties like increase in the confinement energy with decreasing radius for different excitonic transitions are studied. Different excitonic transitions are calculated from the second derivative of UV-vis absorption spectra of as synthesized CdSe QDs. The transitions are assigned to specific states by calculating the transition energies using effective mass approximation. A close matching of the transition energies with the experiment suggesting that the second derivative of the absorption spectra could provide a direct knowledge of the electronic transition for the direct band gap semiconductor quantum dots.

摘要

我们报道了不同半径(R)的CdSe纳米晶量子点(QD)的合成。研究了尺寸依赖的光学性质,如不同激子跃迁的限制能量随半径减小而增加。从合成的CdSe量子点的紫外-可见吸收光谱的二阶导数计算出不同的激子跃迁。通过使用有效质量近似计算跃迁能量,将这些跃迁分配到特定状态。跃迁能量与实验结果的紧密匹配表明,吸收光谱的二阶导数可以直接提供关于直接带隙半导体量子点电子跃迁的知识。

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