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银掺杂对CdSe量子点电子和光学性质的影响。

Effects of Ag doping on the electronic and optical properties of CdSe quantum dots.

作者信息

Zhao F A, Xiao H Y, Bai X M, Zu X T

机构信息

School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China.

Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061, USA.

出版信息

Phys Chem Chem Phys. 2019 Aug 7;21(29):16108-16119. doi: 10.1039/c9cp02433f. Epub 2019 Jul 10.

Abstract

Cadmium selenide (CdSe) nanocrystals are important photoelectric materials. Doping heterovalent impurities such as silver (Ag) in CdSe nanocrystal quantum dots (QDs) can provide additional charge carriers, which can significantly enhance the performance of CdSe QDs for their potential applications in high-efficiency photovoltaic devices. Using density functional theory (DFT) based calculations with the Heyd-Scuseria-Ernzerhof (HSE06) screened hybrid functional, we demonstrate that Ag doping can affect the structural, electronic and optical properties of CdSe QDs significantly. The location and number of Ag dopant atoms are critical factors for modifying the electronic structure, in particular the change of energy position and shape of the valence and conduction band edges. It is found that doping of Ag atoms into the core region of a CdSe nanoparticle induces metallic-like electronic characteristics with a dense number of electrons emerging at the Fermi level. However, incorporation of Ag dopant into the surface of a CdSe quantum dot introduces some mid-gap states that mainly consist of Se 4p states, and results in a new sub-bandgap electronic transition from mid-gap states to the conduction band. The calculated absorption spectra indicate that doping of just one or two Ag atoms greatly strengthens the absorption in the ultraviolet-visible regime and extends the absorption edges of CdSe QDs into the infrared regime. In particular, the spectra show a high-intensity absorption band between 424 and 600 nm with just 1 Ag atom incorporated into the CdSe QDs. Based on the improved absorption spectra, the present results provide a science-based strategy for designing Ag-doped CdSe QDs with enhanced visible light absorption for their application in high-efficiency photovoltaic devices.

摘要

硒化镉(CdSe)纳米晶体是重要的光电材料。在CdSe纳米晶体量子点(QDs)中掺杂异价杂质,如银(Ag),可以提供额外的电荷载流子,这能够显著提高CdSe量子点在高效光伏器件潜在应用中的性能。使用基于密度泛函理论(DFT)并采用Heyd-Scuseria-Ernzerhof(HSE06)筛选混合泛函的计算方法,我们证明Ag掺杂会显著影响CdSe量子点的结构、电子和光学性质。Ag掺杂原子的位置和数量是改变电子结构的关键因素,特别是价带和导带边缘的能量位置和形状的变化。研究发现,将Ag原子掺杂到CdSe纳米颗粒的核心区域会诱导出类似金属的电子特性,在费米能级出现大量密集电子。然而,将Ag掺杂剂掺入CdSe量子点的表面会引入一些主要由Se 4p态组成的中间能隙态,并导致从中间能隙态到导带的新的亚能隙电子跃迁。计算得到的吸收光谱表明,仅掺杂一两个Ag原子就能大大增强紫外-可见光区域的吸收,并将CdSe量子点的吸收边缘扩展到红外区域。特别是,光谱显示在CdSe量子点中仅掺入1个Ag原子时,在424至600 nm之间有一个高强度吸收带。基于改进后的吸收光谱,目前的结果为设计具有增强可见光吸收的Ag掺杂CdSe量子点以用于高效光伏器件提供了一种基于科学的策略。

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