硼掺杂金刚石薄膜的表面纳米结构及其电化学性能。

Surface nanostructuring of boron-doped diamond films and their electrochemical performance.

作者信息

Zou Y S, Yang Y, Zhou Y L, Li Z X, Yang H, He B, Bello I, Zhang W J

机构信息

School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu, 210094, China.

出版信息

J Nanosci Nanotechnol. 2011 Sep;11(9):7914-9. doi: 10.1166/jnn.2011.4742.

DOI:10.1166/jnn.2011.4742

PMID:22097505

Abstract

Uniform and vertically aligned nanocone and nanopillar arrays were successfully constructed on heavily boron-doped nanocrysatlline diamond films by carrying out bias-assisted reactive ion etching in hydrogen/argon plasmas. The electrochemical properties of the nanostructured boron-doped diamond films were investigated by cyclic voltammetry using 1 mM Fe(CN)6 as redox couple. Compared to the planar boron-doped nanocrystalline diamond film electrode, the surface nanostructuring of boron-doped diamond film electrodes demonstrate enhanced sensitivity due to their enlarged electro-active surface areas. The results indicated that boron-doped diamond nanocones and nanopillars are promising electrode materials which benefit to improve the efficiency, sensitivity and reproducibility of biomedical and chemical sensors.

摘要

通过在氢/氩等离子体中进行偏压辅助反应离子刻蚀，成功地在重硼掺杂纳米晶金刚石薄膜上构建了均匀且垂直排列的纳米锥和纳米柱阵列。使用1 mM Fe(CN)6作为氧化还原对，通过循环伏安法研究了纳米结构硼掺杂金刚石薄膜的电化学性质。与平面硼掺杂纳米晶金刚石薄膜电极相比，硼掺杂金刚石薄膜电极的表面纳米结构化由于其增大的电活性表面积而表现出更高的灵敏度。结果表明，硼掺杂金刚石纳米锥和纳米柱是很有前景的电极材料，有助于提高生物医学和化学传感器的效率、灵敏度和重现性。