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高质量硼掺杂多晶金刚石薄膜电极的标准电化学行为。

Standard electrochemical behavior of high-quality, boron-doped polycrystalline diamond thin-film electrodes.

作者信息

Granger MC, Witek M, Xu J, Wang J, Hupert M, Hanks A, Koppang MD, Butler JE, Lucazeau G, Mermoux M, Strojek JW, Swain GM

机构信息

Department of Chemistry and Biochemistry, Utah State University, Logan 84322-0300, USA.

出版信息

Anal Chem. 2000 Aug 15;72(16):3793-804. doi: 10.1021/ac0000675.

DOI:10.1021/ac0000675
PMID:10959965
Abstract

Standard electrochemical data for high-quality, boron-doped diamond thin-film electrodes are presented. Films from two different sources were compared (NRL and USU) and both were highly conductive, hydrogen-terminated, and polycrystalline. The films are acid washed and hydrogen plasma treated prior to use to remove nondiamond carbon impurity phases and to hydrogen terminate the surface. The boron-doping level of the NRL film was estimated to be in the mid 1019 B/cm3 range, and the boron-doping level of the USU films was approximately 5 x 10(20) B/cm(-3) based on boron nuclear reaction analysis. The electrochemical response was evaluated using Fe-(CN)6(3-/4-), Ru(NH3)6(3+/2+), IrCl6(2-/3-), methyl viologen, dopamine, ascorbic acid, Fe(3+/2+), and chlorpromazine. Comparisons are made between the apparent heterogeneous electron-transfer rate constants, k0(app), observed at these high-quality diamond films and the rate constants reported in the literature for freshly activated glassy carbon. Ru(NH3)6(3+/2+), IrCl6(2-/3-), methyl viologen, and chlorpromazine all involve electron transfer that is insensitive to the diamond surface microstructure and chemistry with k0(app) in the 10(-2)-10(-1) cm/s range. The rate constants are mainly influenced by the electronic properites of the films. Fe(CN)6(3-/4-) undergoes electron transfer that is extremely sensitive to the surface chemistry with k0(app) in the range of 10(-2)-10(-1) cm/s at the hydrogen-terminated surface. An oxygen surface termination severely inhibits the rate of electron transfer. Fe(3+/2+) undergoes slow electron transfer at the hydrogen-terminated surface with k0(app) near 10(-5) cm/s. The rate of electron transfer at sp2 carbon electrodes is known to be mediated by surface carbonyl functionalities; however, this inner-sphere, catalytic pathway is absent on diamond due to the hydrogen termination. Dopamine, like other catechol and catecholamines, undergoes sluggish electron transfer with k0(app) between 10(-4) and 10(-5) cm/s. Converting the surface to an oxygen termination has little effect on k0(app). The slow kinetics may be related to weak adsorption of these analytes on the diamond surface. Ascorbic acid oxidation is very sensitive to the surface termination with the most negative Ep(ox) observed at the hydrogen-terminated surface. An oxygen surface termination shifts Ep(ox) positive by some 250 mV or more. An interfacial energy diagram is proposed to explain the electron transfer whereby the midgap density of states results primarily from the boron doping level and the lattice hydrogen. The films were additionally characterized by scanning electron microscopy and micro-Raman imaging spectroscopy. The cyclic voltammetric and kinetic data presented can serve as a benchmark for research groups evaluating the electrochemical properties of semimetallic (i.e., conductive), hydrogen-terminated, polycrystalline diamond.

摘要

本文展示了高质量掺硼金刚石薄膜电极的标准电化学数据。比较了来自两个不同来源的薄膜(海军研究实验室和犹他州立大学),二者均具有高导电性、氢端接且为多晶结构。薄膜在使用前经过酸洗和氢等离子体处理,以去除非金刚石碳杂质相并使表面氢端接。基于硼核反应分析,海军研究实验室薄膜的硼掺杂水平估计在10¹⁹ B/cm³ 范围中部,犹他州立大学薄膜的硼掺杂水平约为5×10²⁰ B/cm⁻³。使用铁氰化物(Fe-(CN)₆³⁻/⁴⁻)、六氨合钌(Ru(NH₃)₆³⁺/²⁺)、六氯铱酸盐(IrCl₆²⁻/³⁻)、甲基紫精、多巴胺、抗坏血酸、铁离子(Fe³⁺/²⁺)和氯丙嗪评估电化学响应。比较了在这些高质量金刚石薄膜上观察到的表观异相电子转移速率常数k₀(app)与文献中报道的新鲜活化玻碳的速率常数。Ru(NH₃)₆³⁺/²⁺、IrCl₆²⁻/³⁻、甲基紫精和氯丙嗪的电子转移均对金刚石表面微观结构和化学性质不敏感,k₀(app)在10⁻² - 10⁻¹ cm/s范围内。速率常数主要受薄膜电子性质影响。Fe(CN)₆³⁻/⁴⁻的电子转移对表面化学性质极为敏感,在氢端接表面k₀(app)在10⁻² - 10⁻¹ cm/s范围内。氧表面端接会严重抑制电子转移速率。Fe³⁺/²⁺在氢端接表面进行缓慢电子转移,k₀(app)接近10⁻⁵ cm/s。已知sp² 碳电极上的电子转移速率由表面羰基官能团介导;然而,由于氢端接,金刚石上不存在这种内球催化途径。多巴胺与其他儿茶酚和儿茶酚胺一样,电子转移缓慢,k₀(app)在10⁻⁴至10⁻⁵ cm/s之间。将表面转变为氧端接对k₀(app)影响不大。缓慢的动力学可能与这些分析物在金刚石表面的弱吸附有关。抗坏血酸氧化对表面端接非常敏感,在氢端接表面观察到最负的氧化峰电位Ep(ox)。氧表面端接使Ep(ox)正向移动约250 mV或更多。提出了一个界面能图来解释电子转移,其中带隙中间态密度主要由硼掺杂水平和晶格氢决定。此外,通过扫描电子显微镜和显微拉曼成像光谱对薄膜进行了表征。所呈现的循环伏安和动力学数据可为评估半金属(即导电)、氢端接、多晶金刚石电化学性质的研究小组提供基准。

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