氧化铟薄膜的原子气相沉积法。

Atomic vapor deposition approach to In2O3 thin films.

作者信息

Hellwig Malte, Parala Harish, Cybinksa Joanna, Barreca Davide, Gasparotto Alberto, Niermann Benedikt, Becker Hans-Werner, Rogalla Detlef, Feydt Jürgen, Irsen Stephan, Mudring Anja-Verena, Winter Jörg, Fischer Roland A, Devi Anjana

机构信息

Inorganic Materials Chemistry, Ruhr-University Bochum, 44801 Bochum, Germany.

出版信息

J Nanosci Nanotechnol. 2011 Sep;11(9):8094-100. doi: 10.1166/jnn.2011.5024.

DOI:10.1166/jnn.2011.5024

PMID:22097536

Abstract

In2O3 thin films were grown by atomic vapor deposition (AVD) on Si(100) and glass substrates from a tris-guanidinate complex of indium [In(N(i)Pr2guanid)3] under an oxygen atmosphere. The effects of the growth temperature on the structure, morphology and composition of In2O3 films were investigated. X-ray diffraction (XRD) measurements revealed that In2O3 films deposited in the temperature range 450-700 degreesC crystallised in the cubic phase. The film morphology, studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM), was strongly dependent on the substrate temperature. Stoichiometric In2O3 films were formed under optimised processing conditions as was confirmed by X-ray photoelectron and X-ray excited Auger electron spectroscopies (XPS, XE-AES), as well as by Rutherford backscattering spectrometry (RBS). Finally, optical properties were investigated by photoluminescence (PL) measurements, spectroscopic ellipsometry (SE) and optical absorption. In2O3 films grown on glass exhibited excellent transparency (approximately 90%) in the Visible (Vis) spectral region.

摘要

在氧气气氛下，通过原子气相沉积（AVD）法，以铟的三胍配合物[In(N(i)Pr2胍)3]为原料，在硅（100）和玻璃衬底上生长氧化铟（In2O3）薄膜。研究了生长温度对In2O3薄膜结构、形貌和成分的影响。X射线衍射（XRD）测量表明，在450 - 700℃温度范围内沉积的In2O3薄膜为立方相结晶。通过扫描电子显微镜（SEM）和原子力显微镜（AFM）研究的薄膜形貌强烈依赖于衬底温度。通过X射线光电子能谱和X射线激发俄歇电子能谱（XPS、XE - AES）以及卢瑟福背散射光谱（RBS）证实，在优化的工艺条件下形成了化学计量比的In2O3薄膜。最后，通过光致发光（PL）测量、光谱椭偏仪（SE）和光吸收研究了光学性质。在玻璃上生长的In2O3薄膜在可见光（Vis）光谱区域表现出优异的透明度（约90%）。