Gelard Isabelle, Chichignoud Guy, Blanquet Elisabeth, Xuan Hoan Nguyen, Cruz Ruben, Jimenez Carmen, Sarigiannidou Eirini, Zaidat Kader
SIMaP Grenoble INP UJF, CNRS, 38402 Saint Martin d'Hères, France.
J Nanosci Nanotechnol. 2011 Sep;11(9):8318-22. doi: 10.1166/jnn.2011.5077.
Highly crystallized silicon layers were grown on metal sheets at high temperature (950 degrees C) by thermal CVD from silane. An intermediate buffer layer was mandatory to prevent interdiffusion and silicide formation but also to compensate lattice parameters and thermal expansion coefficients mismatches between metal and silicon and ideally transfer some crystalline properties (grain size, texture) from the substrate to the silicon layer. After a thermodynamic study, aluminum nitride or titanium nitride diffusion barrier layers were selected and processed by CVD. The structure and the interfaces stabilities of these silicon/nitride/metal stacks were studied by field effect gun scanning and transmission electron microscopy, X-ray diffraction, Raman and energy dispersive X-ray spectroscopy. As a result, TiN deposited by CVD appears to be an efficient material as a buffer layer between steel and silicon.
通过硅烷热化学气相沉积（Thermal CVD）在高温（950摄氏度）的金属片上生长高度结晶的硅层。必须有一个中间缓冲层来防止相互扩散和硅化物形成，同时还要补偿金属与硅之间的晶格参数和热膨胀系数不匹配，并理想地将一些晶体特性（晶粒尺寸、织构）从衬底传递到硅层。经过热力学研究后，选择了氮化铝或氮化钛扩散阻挡层并通过化学气相沉积进行处理。通过场效应枪扫描和透射电子显微镜、X射线衍射、拉曼光谱和能量色散X射线光谱对这些硅/氮化物/金属叠层的结构和界面稳定性进行了研究。结果表明，通过化学气相沉积沉积的TiN似乎是一种作为钢和硅之间缓冲层的有效材料。
