Physics Department, California Institute of Technology, MC 114-36, 1200 East California Boulevard, Pasadena, California 91125, USA.
Phys Rev Lett. 2011 Oct 21;107(17):176801. doi: 10.1103/PhysRevLett.107.176801. Epub 2011 Oct 17.
The strong topological insulator in 3D is expected to realize a quantized magnetoelectric response, the so-called axion response. However, many of the materials predicted to be topological insulators have turned out to be metallic, with bulk Fermi surfaces. Following the result of Bergman and Refael [Phys. Rev. B 82, 195417 (2010)] that the surface states of the topological insulator persist even when the band structure gap is closed, we explore the fate of the magnetoelectric response in such systems. We find that a nonquantized magnetoelectric coupling remains once a bulk Fermi surface opens. More generally, we find higher-dimensional analogs of the intrinsic anomalous Hall effect for all Chern forms-quantized transport coefficients in the gapped case become nonquantized when the gap is closed. In particular, the nonquantized magnetoelectric response in 3D descends from the intrinsic anomalous Hall effect analog in 4D.
三维强拓扑绝缘体有望实现量子磁电响应,即所谓的轴子响应。然而,许多被预测为拓扑绝缘体的材料实际上是具有体费米面的金属。在 Bergman 和 Refael 的研究结果[Phys. Rev. B 82, 195417 (2010)]之后,我们探索了这种系统中磁电响应的命运。他们发现,即使能带结构间隙关闭,拓扑绝缘体的表面态仍然存在。我们发现,一旦体费米面打开,磁电耦合就会保持非量子化。更一般地说,我们发现对于所有 Chern 形式,本征反常霍尔效应的高维类似物——在带隙关闭时,量子输运系数变为非量子化。特别是,三维非量子磁电响应来源于 4 维本征反常霍尔效应类似物。