Robust axion insulator and Chern insulator phases in a two-dimensional antiferromagnetic topological insulator.

The intricate interplay between non-trivial topology and magnetism in two-dimensional materials can lead to the emergence of interesting phenomena such as the quantum anomalous Hall effect. Here we investigate the quantum transport of both bulk crystal and exfoliated MnBiTe flakes in a field-effect transistor geometry. For the six septuple-layer device tuned into the insulating regime, we observe a large longitudinal resistance and zero Hall plateau, which are characteristics of an axion insulator state. The robust axion insulator state occurs in zero magnetic field, over a wide magnetic-field range and at relatively high temperatures. Moreover, a moderate magnetic field drives a quantum phase transition from the axion insulator phase to a Chern insulator phase with zero longitudinal resistance and quantized Hall resistance h/e, where h is Planck's constant and e is electron charge. Our results pave the way for using even-number septuple-layer MnBiTe to realize the quantized topological magnetoelectric effect and axion electrodynamics in condensed matter systems.