Wan Yuhao, Li Jiayu, Liu Qihang
Department of Physics and Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology, Shenzhen 518055, China.
Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, China.
Natl Sci Rev. 2022 Jul 22;11(2):nwac138. doi: 10.1093/nsr/nwac138. eCollection 2024 Feb.
The topological magnetoelectric effect (TME) is a hallmark response of the topological field theory, which provides a paradigm shift in the study of emergent topological phenomena. However, its direct observation is yet to be realized due to the demanding magnetic configuration required to gap all surface states. Here, we theoretically propose that axion insulators with a simple ferromagnetic configuration, such as the MnBiTe/(BiTe) family, provide an ideal playground to realize the TME. In the designed triangular prism geometry, all the surface states are magnetically gapped. Under a vertical electric field, the surface Hall currents give rise to a nearly half-quantized orbital moment, accompanied by a gapless chiral hinge mode circulating in parallel. Thus, the orbital magnetization from the two topological origins can be easily distinguished by reversing the electric field. Our work paves the way for direct observation of the TME in realistic axion-insulator materials.
拓扑磁电效应(TME)是拓扑场论的一个标志性响应,它为新兴拓扑现象的研究提供了一种范式转变。然而,由于使所有表面态都能隙化所需的苛刻磁结构,其直接观测尚未实现。在此,我们从理论上提出,具有简单铁磁结构的轴子绝缘体,如MnBiTe/(BiTe)族,为实现TME提供了一个理想的平台。在设计的三棱柱几何结构中,所有表面态都被磁能隙化。在垂直电场作用下,表面霍尔电流会产生一个近乎半量子化的轨道矩,同时伴随着一个无隙手性铰链模式平行循环。因此,通过反转电场,可以很容易地区分来自两个拓扑起源的轨道磁化。我们的工作为在实际的轴子绝缘体材料中直接观测TME铺平了道路。