CNR Istituto Officina dei Materiali (IOM), Laboratorio TASC, S.S.14, Km 163.5, I-34149 Trieste, Italy.
Phys Rev Lett. 2011 Oct 28;107(18):187203. doi: 10.1103/PhysRevLett.107.187203. Epub 2011 Oct 27.
We report x-ray photoemission spectroscopy results on (Ga,Mn)As films as a function of both temperature and Mn doping. Analysis of Mn 2p core level spectra reveals the presence of a distinct electronic screening channel in the bulk, hitherto undetected in more surface sensitive analysis. Comparison with model calculations identifies the character of the Mn 3d electronic states and clarifies the role, and the difference between surface and bulk, of hybridization in mediating the ferromagnetic coupling in (Ga,Mn)As.
我们报告了 (Ga,Mn)As 薄膜随温度和 Mn 掺杂的 X 射线光电子能谱结果。Mn 2p 芯能级谱的分析揭示了在体相中存在一个明显的电子屏蔽通道,这在更表面敏感的分析中尚未检测到。与模型计算的比较确定了 Mn 3d 电子态的特征,并阐明了杂化在介导 (Ga,Mn)As 中铁磁耦合中的作用以及表面和体相之间的差异。