School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom.
Phys Rev Lett. 2011 Nov 4;107(19):197601. doi: 10.1103/PhysRevLett.107.197601. Epub 2011 Nov 1.
We report a study of the electronic properties of the ferromagnetic semiconductor (Ga,Mn)As using magnetic linear dichroism in the angular dependence of Mn 2p photoemission under hard x-ray excitation. Bulk plasmon loss satellites demonstrate that the probed Mn ions are incorporated deep within the GaAs lattice, while the observed large dichroism indicates that the spectra originate from ferromagnetic substitutional Mn. Simulations of the spectra using an Anderson impurity model show that the ferromagnetic Mn 3d electrons of substitutional Mn in (Ga,Mn)As are intermediate between localized and delocalized.
我们使用硬 X 射线激发下 Mn 2p 光电子发射的角分布中的磁线性二色性研究了铁磁半导体 (Ga,Mn)As 的电子性质。体等离子体损失卫星表明，所探测到的 Mn 离子深嵌入 GaAs 晶格中，而观察到的大二色性表明光谱源自铁磁替代 Mn。使用安德森杂质模型对光谱进行的模拟表明，(Ga,Mn)As 中替代 Mn 的铁磁 Mn 3d 电子处于局域和离域之间。
